PSW1H 175/14 POWERSEM
Hersteller: POWERSEM
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 175A; ECO-PAC 1; Ufmax: 1.57V; THT
Max. off-state voltage: 1.4kV
Load current: 175A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Features of semiconductor devices: glass passivated
Semiconductor structure: opposing
Gate current: 100/200mA
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Anzahl je Verpackung: 1 Stücke
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 175A; ECO-PAC 1; Ufmax: 1.57V; THT
Max. off-state voltage: 1.4kV
Load current: 175A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Features of semiconductor devices: glass passivated
Semiconductor structure: opposing
Gate current: 100/200mA
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Anzahl je Verpackung: 1 Stücke
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Technische Details PSW1H 175/14 POWERSEM
Category: Diode - thyristor modules, Description: Module: diode-thyristor; 1.4kV; 175A; ECO-PAC 1; Ufmax: 1.57V; THT, Max. off-state voltage: 1.4kV, Load current: 175A, Max. forward impulse current: 1.5kA, Electrical mounting: THT, Max. forward voltage: 1.57V, Case: ECO-PAC 1, Mechanical mounting: screw, Features of semiconductor devices: glass passivated, Semiconductor structure: opposing, Gate current: 100/200mA, Type of module: diode-thyristor, Threshold on-voltage: 0.85V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PSW1H 175/14
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PSW1H 175/14 | Hersteller : POWERSEM |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 175A; ECO-PAC 1; Ufmax: 1.57V; THT Max. off-state voltage: 1.4kV Load current: 175A Max. forward impulse current: 1.5kA Electrical mounting: THT Max. forward voltage: 1.57V Case: ECO-PAC 1 Mechanical mounting: screw Features of semiconductor devices: glass passivated Semiconductor structure: opposing Gate current: 100/200mA Type of module: diode-thyristor Threshold on-voltage: 0.85V |
Produkt ist nicht verfügbar |