QSD12HCS65U Quest Semi
Hersteller: Quest SemiDescription: DIODE SIC 650V 12A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.32 EUR |
| 10+ | 4.35 EUR |
| 100+ | 3.96 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 3.11 EUR |
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Technische Details QSD12HCS65U Quest Semi
Description: DIODE SIC 650V 12A TO247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Supplier Device Package: TO-247-3L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.