R1EV58064BDARBI#B2 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: IC EEPROM 64KBIT PARALLEL 28DIP
Packaging: Tray
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-DIP
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details R1EV58064BDARBI#B2 Renesas Electronics Corporation
Description: IC EEPROM 64KBIT PARALLEL 28DIP, Packaging: Tray, Package / Case: 28-DIP (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 64Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: EEPROM, Memory Format: EEPROM, Supplier Device Package: 28-DIP, Write Cycle Time - Word, Page: 10ms, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 8K x 8, DigiKey Programmable: Not Verified.