RJH60V2BDPP-M0#T2

RJH60V2BDPP-M0#T2 Renesas Electronics Corporation


rjh60v2bdpp-m0-datasheet-r07ds0760ej0100 Hersteller: Renesas Electronics Corporation
Description: IGBT 600V 25A 34W TO-220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 33ns/65ns
Switching Energy: 30µJ (on), 180µJ (off)
Test Condition: 300V, 12A, 5Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 34 W
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Technische Details RJH60V2BDPP-M0#T2 Renesas Electronics Corporation

Description: IGBT 600V 25A 34W TO-220FL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A, Supplier Device Package: TO-220FL, IGBT Type: Trench, Td (on/off) @ 25°C: 33ns/65ns, Switching Energy: 30µJ (on), 180µJ (off), Test Condition: 300V, 12A, 5Ohm, 15V, Gate Charge: 32 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 34 W.

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RJH60V2BDPP-M0#T2 Hersteller : Renesas Electronics REN_r07ds0760ej0100_rjh60v2bdp_DST_20120525-1999194.pdf IGBT Transistors IGBT
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