RJK0390DPA-00#J53 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 30V 65A 8WPAK
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: 8-WPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 204+ | 2.44 EUR |
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Technische Details RJK0390DPA-00#J53 Renesas Electronics Corporation
Description: MOSFET N-CH 30V 65A 8WPAK, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: 8-WPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V.