Produkte > RENESAS > RJK5030DPD-03#J2

RJK5030DPD-03#J2 Renesas

r07ds0050ej_rjk5030dpd.pdf
Hersteller: Renesas
Description: RJK5030DPD - N CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: MP-3A
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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Technische Details RJK5030DPD-03#J2 Renesas

Description: RJK5030DPD - N CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: MP-3A, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 41.7W (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.