RJL6013DPE-00#J3 Renesas Electronics America Inc
Hersteller: Renesas Electronics America IncDescription: MOSFET N-CH 600V 11A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 810mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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Technische Details RJL6013DPE-00#J3 Renesas Electronics America Inc
Description: MOSFET N-CH 600V 11A 4LDPAK, Packaging: Tape & Reel (TR), Package / Case: SC-83, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 810mOhm @ 5.5A, 10V, Power Dissipation (Max): 100W (Tc), Supplier Device Package: LDPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.