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RJP65T43DPQ-A0#T2

RJP65T43DPQ-A0#T2 Renesas Electronics America Inc

rjp65t43dpq-a0-data-sheet-650v-30a-igbt-application-power-factor-correction-circuit Hersteller: Renesas Electronics America Inc
Description: IGBT TRENCH 650V 60A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/105ns
Switching Energy: 170µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 150 W
auf Bestellung 1553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.27 EUR
10+ 5.26 EUR
100+ 4.26 EUR
500+ 3.79 EUR
1000+ 3.24 EUR
Mindestbestellmenge: 3
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Technische Details RJP65T43DPQ-A0#T2 Renesas Electronics America Inc

Description: IGBT TRENCH 650V 60A TO247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 35ns/105ns, Switching Energy: 170µJ (on), 130µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 69 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 150 W.