RN1101CT(TPL3)

RN1101CT(TPL3) Toshiba Semiconductor and Storage


RN1101-06.pdf Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
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Technische Details RN1101CT(TPL3) Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 20V 0.05A CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: CST3, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 50 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.