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RN1416,LF

RN1416,LF Toshiba Semiconductor and Storage

docget.jsp?did=18796&prodName=RN1415 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
107+0.17 EUR
173+0.1 EUR
500+0.074 EUR
1000+0.065 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1416,LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

Weitere Produktangebote RN1416,LF nach Preis ab 0.048 EUR bis 0.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1416,LF RN1416,LF Hersteller : Toshiba RN1416_datasheet_en_20140301-1916055.pdf Digital Transistors S-MINI PLN TRANSIST Pd=200mW F=1MHz
auf Bestellung 3594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+0.27 EUR
18+0.17 EUR
100+0.1 EUR
500+0.076 EUR
1000+0.056 EUR
6000+0.048 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
RN1416,LF RN1416,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH