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RQ1A070ZPFRATR ROHM SEMICONDUCTOR


Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details RQ1A070ZPFRATR ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -12V, Drain current: -7A, Pulsed drain current: -28A, Power dissipation: 1.5W, Case: TSMT8, Gate-source voltage: ±10V, On-state resistance: 38mΩ, Mounting: SMD, Gate charge: 58nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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RQ1A070ZPFRATR Hersteller : ROHM SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar