Produkte > ROHM SEMICONDUCTOR > RTQ025P02FRATR

RTQ025P02FRATR ROHM SEMICONDUCTOR


Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details RTQ025P02FRATR ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2.5A, Pulsed drain current: -10A, Power dissipation: 1.25W, Case: TSMT6, Gate-source voltage: ±12V, On-state resistance: 0.19Ω, Mounting: SMD, Gate charge: 6.4nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.

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RTQ025P02FRATR Hersteller : ROHM SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH