RUQ050N02FRATR ROHM SEMICONDUCTOR
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Case: TSMT6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 12nC
On-state resistance: 80mΩ
Power dissipation: 1.25W
Drain current: 5A
Pulsed drain current: 10A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Case: TSMT6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 12nC
On-state resistance: 80mΩ
Power dissipation: 1.25W
Drain current: 5A
Pulsed drain current: 10A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details RUQ050N02FRATR ROHM SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6, Case: TSMT6, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Gate charge: 12nC, On-state resistance: 80mΩ, Power dissipation: 1.25W, Drain current: 5A, Pulsed drain current: 10A, Gate-source voltage: ±10V, Drain-source voltage: 20V, Polarisation: unipolar, Kind of package: reel; tape.