S1J-K R2G Taiwan Semiconductor
auf Bestellung 7092 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.46 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.09 EUR |
| 2500+ | 0.08 EUR |
| 7500+ | 0.06 EUR |
| 45000+ | 0.05 EUR |
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Technische Details S1J-K R2G Taiwan Semiconductor
Description: DIODE GEN PURP 600V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Weitere Produktangebote S1J-K R2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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S1J-KR2G | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 600V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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