S1J-K R2G Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 7+ | 0.46 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.09 EUR |
| 2500+ | 0.077 EUR |
| 7500+ | 0.058 EUR |
| 45000+ | 0.051 EUR |
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Technische Details S1J-K R2G Taiwan Semiconductor
Description: DIODE GEN PURP 600V 1A DO214AC, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V.
Weitere Produktangebote S1J-K R2G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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S1J-KR2G | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 600V 1A DO214ACOperating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 12pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S1J-KR2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH