S1M1000170K SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Drain-source voltage: 1.7kV
Drain current: 3.7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 81W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 10nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 15A
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Drain-source voltage: 1.7kV
Drain current: 3.7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 81W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 10nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 15A
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.87 EUR |
| 26+ | 2.75 EUR |
| 30+ | 2.39 EUR |
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Technische Details S1M1000170K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W, Drain-source voltage: 1.7kV, Drain current: 3.7A, On-state resistance: 1.9Ω, Type of transistor: N-MOSFET, Power dissipation: 81W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 10nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 15A, Mounting: THT, Case: TO247-4, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S1M1000170K nach Preis ab 2.75 EUR bis 2.87 EUR
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S1M1000170K | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W Drain-source voltage: 1.7kV Drain current: 3.7A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 81W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 10nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 15A Mounting: THT Case: TO247-4 |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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