S1M1000170K SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 81W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 81W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| 21+ | 3.4 EUR |
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Technische Details S1M1000170K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 3.7A, Pulsed drain current: 15A, Power dissipation: 81W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 1.9Ω, Mounting: THT, Gate charge: 10nC, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S1M1000170K nach Preis ab 7.15 EUR bis 7.15 EUR
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S1M1000170K | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.7A Pulsed drain current: 15A Power dissipation: 81W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 1.9Ω Mounting: THT Gate charge: 10nC Kind of package: tube Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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