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S1M1000170K

S1M1000170K SMC DIODE SOLUTIONS


Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Case: TO247-4
Mounting: THT
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
On-state resistance: 1.9Ω
Pulsed drain current: 15A
Power dissipation: 81W
Gate charge: 10nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 3.7A
Kind of channel: enhancement
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.18 EUR
20+4.34 EUR
30+4.03 EUR
150+3.61 EUR
300+3.42 EUR
Mindestbestellmenge: 14 Stücke
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Technische Details S1M1000170K SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W, Case: TO247-4, Mounting: THT, Drain-source voltage: 1.7kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, Kind of package: tube, On-state resistance: 1.9Ω, Pulsed drain current: 15A, Power dissipation: 81W, Gate charge: 10nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 3.7A, Kind of channel: enhancement.