S2M0016120K SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 714W
Technology: SiC
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 314A
Drain-source voltage: 1.2kV
Drain current: 140A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 38.48 EUR |
| 5+ | 38.47 EUR |
| 300+ | 37.01 EUR |
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Technische Details S2M0016120K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W, Mounting: THT, Features of semiconductor devices: Kelvin terminal, Case: TO247-4, Power dissipation: 714W, Technology: SiC, Kind of package: tube, Gate charge: 224nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 314A, Drain-source voltage: 1.2kV, Drain current: 140A, On-state resistance: 16mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0016120K nach Preis ab 38.48 EUR bis 38.48 EUR
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S2M0016120K | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 714W Technology: SiC Kind of package: tube Gate charge: 224nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 314A Drain-source voltage: 1.2kV Drain current: 140A On-state resistance: 16mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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