S2M0016120K SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Case: TO247-4
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 224nC
On-state resistance: 16mΩ
Drain-source voltage: 1.2kV
Drain current: 140A
Power dissipation: 714W
Pulsed drain current: 314A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 52.22 EUR |
| 5+ | 46.9 EUR |
| 10+ | 41.58 EUR |
| 30+ | 37.35 EUR |
| 120+ | 36.15 EUR |
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Technische Details S2M0016120K SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W, Case: TO247-4, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 224nC, On-state resistance: 16mΩ, Drain-source voltage: 1.2kV, Drain current: 140A, Power dissipation: 714W, Pulsed drain current: 314A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0016120K nach Preis ab 52.22 EUR bis 52.22 EUR
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S2M0016120K | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W Case: TO247-4 Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 224nC On-state resistance: 16mΩ Drain-source voltage: 1.2kV Drain current: 140A Power dissipation: 714W Pulsed drain current: 314A |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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