S2M0025120D SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W, Mounting: THT, Case: TO247-3, Power dissipation: 517W, Technology: SiC, Kind of package: tube, Gate charge: 130nC, Kind of channel: enhanced, Gate-source voltage: -10...25V, Pulsed drain current: 250A, Drain-source voltage: 1.2kV, Drain current: 39A, On-state resistance: 41mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.