S2M0080120D SMC DIODE SOLUTIONS
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 18.82 EUR |
| 6+ | 12.2 EUR |
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Technische Details S2M0080120D SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V.
Weitere Produktangebote S2M0080120D nach Preis ab 19.06 EUR bis 25.01 EUR
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| S2M0080120D | Hersteller : SMC Diode Solutions |
 Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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