S2M0080120D SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W
Mounting: THT
Case: TO247-3
Power dissipation: 231W
Technology: SiC
Kind of package: tube
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Pulsed drain current: 82A
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 17.49 EUR |
| 6+ | 12.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details S2M0080120D SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V.
Weitere Produktangebote S2M0080120D nach Preis ab 12.05 EUR bis 25.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
S2M0080120D | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W Mounting: THT Case: TO247-3 Power dissipation: 231W Technology: SiC Kind of package: tube Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: -10...25V Pulsed drain current: 82A Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 137mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
| S2M0080120D | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
|