S2M0120120J

S2M0120120J SMC DIODE SOLUTIONS


pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D836C196B5E0DC&compId=S2M0120120J.pdf?ci_sign=7c609f8b72ee99d9ee43b0d457926436a58067ef Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 153W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.84 EUR
18+4.02 EUR
19+3.79 EUR
500+3.65 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details S2M0120120J SMC DIODE SOLUTIONS

Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V, Power Dissipation (Max): 153W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.3mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V.

Weitere Produktangebote S2M0120120J nach Preis ab 3.65 EUR bis 11.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S2M0120120J S2M0120120J Hersteller : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D836C196B5E0DC&compId=S2M0120120J.pdf?ci_sign=7c609f8b72ee99d9ee43b0d457926436a58067ef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 153W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.84 EUR
18+4.02 EUR
19+3.79 EUR
500+3.65 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
S2M0120120J S2M0120120J Hersteller : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D836C196B5E0DC&compId=S2M0120120J.pdf?ci_sign=7c609f8b72ee99d9ee43b0d457926436a58067ef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 153W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.84 EUR
18+4.02 EUR
19+3.79 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
S2M0120120J S2M0120120J Hersteller : SMC Diode Solutions S2M0120120J%20N2718%20REV.A.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.3mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.83 EUR
10+8.40 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH