S2M0160120T SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.76 EUR |
| 36+ | 2.03 EUR |
| 38+ | 1.93 EUR |
| 600+ | 1.86 EUR |
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Technische Details S2M0160120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 12A, Pulsed drain current: 40A, Power dissipation: 121W, Case: TOLL, Gate-source voltage: -5...20V, On-state resistance: 0.3Ω, Mounting: SMD, Gate charge: 26.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0160120T nach Preis ab 1.93 EUR bis 3.76 EUR
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| S2M0160120T | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 40A Power dissipation: 121W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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