S2M0160120T
  • S2M0160120T
  • S2M0160120T

S2M0160120T SMC DIODE SOLUTIONS



Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Case: TOLL
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Drain-source voltage: 1.2kV
Technology: SiC
auf Bestellung 40 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
24+2.99 EUR
Mindestbestellmenge: 17
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Technische Details S2M0160120T SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Case: TOLL, Kind of channel: enhancement, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 26.5nC, On-state resistance: 0.3Ω, Drain current: 12A, Pulsed drain current: 40A, Power dissipation: 121W, Drain-source voltage: 1.2kV, Technology: SiC.