S2M0160120T SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Kind of package: reel; tape
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 121W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: TOLL
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Kind of package: reel; tape
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 121W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: TOLL
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.92 EUR |
| 35+ | 2.04 EUR |
| 38+ | 1.93 EUR |
| 900+ | 1.89 EUR |
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Technische Details S2M0160120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Kind of package: reel; tape, Drain current: 12A, On-state resistance: 0.3Ω, Type of transistor: N-MOSFET, Power dissipation: 121W, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Gate charge: 26.5nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 40A, Mounting: SMD, Case: TOLL, Drain-source voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0160120T nach Preis ab 1.93 EUR bis 3.92 EUR
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| S2M0160120T | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Kind of package: reel; tape Drain current: 12A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 121W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 26.5nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 40A Mounting: SMD Case: TOLL Drain-source voltage: 1.2kV |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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