S2M0160120T SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Mounting: SMD
Technology: SiC
Case: TOLL
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 121W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Mounting: SMD
Technology: SiC
Case: TOLL
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 121W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.5 EUR |
| 31+ | 2.33 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.86 EUR |
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Technische Details S2M0160120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL, Mounting: SMD, Technology: SiC, Case: TOLL, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 26.5nC, On-state resistance: 0.3Ω, Power dissipation: 121W, Drain current: 12A, Pulsed drain current: 40A, Drain-source voltage: 1.2kV, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0160120T nach Preis ab 2.33 EUR bis 3.5 EUR
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S2M0160120T | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Mounting: SMD Technology: SiC Case: TOLL Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 26.5nC On-state resistance: 0.3Ω Power dissipation: 121W Drain current: 12A Pulsed drain current: 40A Drain-source voltage: 1.2kV Kind of package: reel; tape |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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