S3M0016120B SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75A
Pulsed drain current: 250A
Power dissipation: 576W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 287nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produktrezensionen
Produktbewertung abgeben
Technische Details S3M0016120B SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V, Power Dissipation (Max): 576W (Tc), Vgs(th) (Max) @ Id: 4V @ 30mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V.
Weitere Produktangebote S3M0016120B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
S3M0016120B | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V Power Dissipation (Max): 576W (Tc) Vgs(th) (Max) @ Id: 4V @ 30mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S3M0016120B |
|
Hersteller: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH