S3M0016120B SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W
Kind of package: tube
Drain current: 75A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 576W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: SMD
Case: T2PAK
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.56 EUR |
| 6+ | 12.36 EUR |
| 7+ | 11.68 EUR |
| 10+ | 11.61 EUR |
| 35+ | 11.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details S3M0016120B SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V, Power Dissipation (Max): 576W (Tc), Vgs(th) (Max) @ Id: 4V @ 30mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V.
Weitere Produktangebote S3M0016120B nach Preis ab 11.61 EUR bis 14.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S3M0016120B | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W Kind of package: tube Drain current: 75A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 576W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 287nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A Mounting: SMD Case: T2PAK Drain-source voltage: 1.2kV |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
 |
S3M0016120B | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V Power Dissipation (Max): 576W (Tc) Vgs(th) (Max) @ Id: 4V @ 30mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V |
Produkt ist nicht verfügbar |