S3M0025120B SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 200A
Power dissipation: 394W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 15.82 EUR |
| 6+ | 14.2 EUR |
| 10+ | 12.57 EUR |
| 35+ | 11.27 EUR |
| 105+ | 10.93 EUR |
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Technische Details S3M0025120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 52A, Pulsed drain current: 200A, Power dissipation: 394W, Case: T2PAK, Gate-source voltage: -4...18V, On-state resistance: 36mΩ, Mounting: SMD, Gate charge: 175nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3M0025120B nach Preis ab 12.57 EUR bis 15.82 EUR
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S3M0025120B | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 200A Power dissipation: 394W Case: T2PAK Gate-source voltage: -4...18V On-state resistance: 36mΩ Mounting: SMD Gate charge: 175nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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