
S3M0025120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 200A
Power dissipation: 394W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 16.97 EUR |
6+ | 11.95 EUR |
7+ | 11.3 EUR |
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Technische Details S3M0025120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 52A, Pulsed drain current: 200A, Power dissipation: 394W, Case: T2PAK, Gate-source voltage: -4...18V, On-state resistance: 36mΩ, Mounting: SMD, Gate charge: 175nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3M0025120B nach Preis ab 11.3 EUR bis 16.97 EUR
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S3M0025120B | Hersteller : SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 200A Power dissipation: 394W Case: T2PAK Gate-source voltage: -4...18V On-state resistance: 36mΩ Mounting: SMD Gate charge: 175nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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