S3M0025120B

S3M0025120B SMC DIODE SOLUTIONS


pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D84D6184FF00DC&compId=S3M0025120B.pdf?ci_sign=ad866f7709c523c352005fbd97629d8a1d70ec36 Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 200A
Power dissipation: 394W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16.97 EUR
6+11.95 EUR
7+11.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details S3M0025120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 52A, Pulsed drain current: 200A, Power dissipation: 394W, Case: T2PAK, Gate-source voltage: -4...18V, On-state resistance: 36mΩ, Mounting: SMD, Gate charge: 175nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote S3M0025120B nach Preis ab 11.3 EUR bis 16.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S3M0025120B S3M0025120B Hersteller : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D84D6184FF00DC&compId=S3M0025120B.pdf?ci_sign=ad866f7709c523c352005fbd97629d8a1d70ec36 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 200A
Power dissipation: 394W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.97 EUR
6+11.95 EUR
7+11.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH