
S3M0025120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: T2PAK
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 175nC
On-state resistance: 36mΩ
Power dissipation: 394W
Drain current: 52A
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 16.87 EUR |
7+ | 11.23 EUR |
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Technische Details S3M0025120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Case: T2PAK, Kind of package: tube, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 175nC, On-state resistance: 36mΩ, Power dissipation: 394W, Drain current: 52A, Pulsed drain current: 200A, Drain-source voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3M0025120B nach Preis ab 11.23 EUR bis 16.87 EUR
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S3M0025120B | Hersteller : SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: T2PAK Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 175nC On-state resistance: 36mΩ Power dissipation: 394W Drain current: 52A Pulsed drain current: 200A Drain-source voltage: 1.2kV |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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