S3M0025120B SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: T2PAK
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 52A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 394W
Polarisation: unipolar
Gate charge: 175nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 200A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 17.37 EUR |
| 6+ | 12.23 EUR |
| 7+ | 11.57 EUR |
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Technische Details S3M0025120B SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Case: T2PAK, Kind of package: tube, Drain-source voltage: 1.2kV, Drain current: 52A, On-state resistance: 36mΩ, Type of transistor: N-MOSFET, Power dissipation: 394W, Polarisation: unipolar, Gate charge: 175nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 200A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3M0025120B nach Preis ab 11.57 EUR bis 17.37 EUR
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S3M0025120B | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: T2PAK Kind of package: tube Drain-source voltage: 1.2kV Drain current: 52A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 394W Polarisation: unipolar Gate charge: 175nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 200A |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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