S3M0025120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W, Case: T2PAK, Mounting: SMD, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, On-state resistance: 36mΩ, Pulsed drain current: 200A, Power dissipation: 394W, Gate charge: 175nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 52A, Kind of channel: enhancement.