S3M0040120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 40A, Pulsed drain current: 200A, Power dissipation: 333W, Case: T2PAK, Gate-source voltage: -4...18V, On-state resistance: 50mΩ, Mounting: SMD, Gate charge: 143nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.