S3M0040120B

S3M0040120B SMC DIODE SOLUTIONS


pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D8530AE491A0DC&compId=S3M0040120B.pdf?ci_sign=0302a434516c7a13f16845c2c9787f902ba5f50b Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: T2PAK
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 200A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.58 EUR
13+5.92 EUR
14+5.29 EUR
15+5.00 EUR
35+4.80 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details S3M0040120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Case: T2PAK, Kind of package: tube, Drain-source voltage: 1.2kV, Drain current: 40A, On-state resistance: 50mΩ, Type of transistor: N-MOSFET, Power dissipation: 333W, Polarisation: unipolar, Gate charge: 143nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 200A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote S3M0040120B nach Preis ab 4.80 EUR bis 6.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S3M0040120B S3M0040120B Hersteller : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D8530AE491A0DC&compId=S3M0040120B.pdf?ci_sign=0302a434516c7a13f16845c2c9787f902ba5f50b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: T2PAK
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 200A
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.58 EUR
13+5.92 EUR
14+5.29 EUR
15+5.00 EUR
35+4.80 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH