S3M0040120B SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W, Mounting: SMD, Power dissipation: 333W, Gate charge: 143nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 40A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: T2PAK, On-state resistance: 50mΩ, Pulsed drain current: 200A.