S3M0040120D SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 223A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 7.06 EUR |
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Technische Details S3M0040120D SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 16mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V.
Weitere Produktangebote S3M0040120D nach Preis ab 7.06 EUR bis 7.06 EUR
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S3M0040120D | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 223A Power dissipation: 130W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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S3M0040120D | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
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