S3M0040120N SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 46A; SOT227B; screw; Idm: 223A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 46A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Pulsed drain current: 223A
Power dissipation: 483W
Technology: SiC
Gate-source voltage: -8...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
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Technische Details S3M0040120N SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V, Power Dissipation (Max): 483W (Tc), Vgs(th) (Max) @ Id: 4V @ 16mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V.
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S3M0040120N | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 483W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
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