| Anzahl | Preis |
|---|---|
| 2+ | 323.09 EUR |
| 25+ | 308.91 EUR |
| 100+ | 292.86 EUR |
| 500+ | 277.2 EUR |
| 1000+ | 264.01 EUR |
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Technische Details SA2T18H450W19SR6 NXP Semiconductors
Description: RF MOSFET LDMOS 30V NI1230, Packaging: Bulk, Package / Case: NI-1230S-4S4S, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 1.805GHz ~ 1.88GHz, Configuration: Dual, Power - Output: 89W, Gain: 16.6dB, Technology: LDMOS, Supplier Device Package: NI-1230S-4S4S, Voltage - Rated: 65 V, Voltage - Test: 30 V, Current - Test: 800 mA.
Weitere Produktangebote SA2T18H450W19SR6 nach Preis ab 344.68 EUR bis 344.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SA2T18H450W19SR6 | Hersteller : NXP Semiconductors |
 Description: RF MOSFET LDMOS 30V NI1230Packaging: Bulk Package / Case: NI-1230S-4S4S Current Rating (Amps): 10µA Mounting Type: Chassis Mount Frequency: 1.805GHz ~ 1.88GHz Configuration: Dual Power - Output: 89W Gain: 16.6dB Technology: LDMOS Supplier Device Package: NI-1230S-4S4S Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 800 mA |
auf Bestellung 25200 Stücke: Lieferzeit 10-14 Tag (e) |
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