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SCM60120R40B6 SIRECTIFIER

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Hersteller: SIRECTIFIER
Category: THT IGBT transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Case: TO247-4
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal

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Technische Details SCM60120R40B6 SIRECTIFIER

Category: THT IGBT transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; TO247-4, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Case: TO247-4, On-state resistance: 40mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.