SD5000I S/B DIP 16L ROHS Linear Integrated Systems, Inc.
Hersteller: Linear Integrated Systems, Inc.
Description: QUAD HIGH SPEED N-CHANNEL LATERA
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
FET Type: 4 N-Channel
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA
Rds On (Max) @ Id, Vgs: 70Ohm @ 1mA, 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 50 mA
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: 16-DIP
Drain to Source Voltage (Vdss): 20 V
Power - Max: 500 mW
Resistance - RDS(On): 70 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 900 pA @ 20 V
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Technische Details SD5000I S/B DIP 16L ROHS Linear Integrated Systems, Inc.
Description: QUAD HIGH SPEED N-CHANNEL LATERA, Packaging: Tube, Package / Case: 16-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, FET Type: 4 N-Channel, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 50mA, Rds On (Max) @ Id, Vgs: 70Ohm @ 1mA, 5V, Voltage - Breakdown (V(BR)GSS): 20 V, Current Drain (Id) - Max: 50 mA, Vgs(th) (Max) @ Id: 1.5V @ 1µA, Supplier Device Package: 16-DIP, Drain to Source Voltage (Vdss): 20 V, Power - Max: 500 mW, Resistance - RDS(On): 70 Ohms, Current - Drain (Idss) @ Vds (Vgs=0): 900 pA @ 20 V.