SEMIX101GD066HDS 27891200 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX101GD066HDS 27891200 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 0.6kV, Case: SEMIX®13, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Topology: IGBT three-phase bridge; thermistor, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX101GD066HDS 27891200
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SEMIX101GD066HDS 27891200 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Case: SEMIX®13 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |