SEMIX101GD066HDS 27891200 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 100A
Case: SEMIX®13
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX101GD066HDS 27891200 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 0.6kV, Collector current: 100A, Case: SEMIX®13, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
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| SEMIX101GD066HDS 27891200 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 0.6kV Collector current: 100A Case: SEMIX®13 Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Mechanical mounting: screw |
Produkt ist nicht verfügbar |