SEMIX106GD12T4P 27896010 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMiX® 6p
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 100A
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX106GD12T4P 27896010 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Case: SEMiX® 6p, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 100A, Pulsed collector current: 300A, Semiconductor structure: transistor/transistor, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SEMIX106GD12T4P 27896010 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: SEMiX® 6p Application: for UPS; frequency changer; Inverter; photovoltaics Collector current: 100A Pulsed collector current: 300A Semiconductor structure: transistor/transistor Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |