SEMIX151GD066HDS 27891210 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX151GD066HDS 27891210 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Case: SEMIX®13, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SEMIX151GD066HDS 27891210 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: SEMIX®13 Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |