SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 299.87 EUR |
| 2+ | 263.84 EUR |
| 4+ | 238.1 EUR |
| 8+ | 223.19 EUR |
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Technische Details SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: SEMIX®13, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX151GD12E4S 27890200 nach Preis ab 238.1 EUR bis 299.87 EUR
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SEMIX151GD12E4S 27890200 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SEMIX®13 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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