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SEMIX151GD12E4S 27890200
  • SEMIX151GD12E4S 27890200
  • SEMIX151GD12E4S 27890200

SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS


SEMIX151GD12E4S.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+299.87 EUR
2+263.84 EUR
4+238.1 EUR
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Technische Details SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: SEMIX®13, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw.