SEMIX202GB066HDS 27891110 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX202GB066HDS 27891110 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Collector current: 200A, Pulsed collector current: 400A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Type of semiconductor module: IGBT, Case: SEMIX2S, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX202GB066HDS 27891110
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SEMIX202GB066HDS 27891110 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Collector current: 200A Pulsed collector current: 400A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Type of semiconductor module: IGBT Case: SEMIX2S Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |