Produkte > SEMIKRON DANFOSS > SEMIX202GB12VS 27890111
SEMIX202GB12VS 27890111

SEMIX202GB12VS 27890111 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F243CB06F280D6&compId=SEMIX202GB12VS.pdf?ci_sign=07601ef9a96495547711b3360d0a484e08b2a1da Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+178.24 EUR
12+172.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SEMIX202GB12VS 27890111 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Mechanical mounting: screw, Electrical mounting: Press-Fit; screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SEMIX202GB12VS 27890111 nach Preis ab 178.24 EUR bis 178.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SEMIX202GB12VS 27890111 SEMIX202GB12VS 27890111 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F243CB06F280D6&compId=SEMIX202GB12VS.pdf?ci_sign=07601ef9a96495547711b3360d0a484e08b2a1da Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+178.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH