
SEMIX202GB12VS 27890111 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 178.24 EUR |
12+ | 172.53 EUR |
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Technische Details SEMIX202GB12VS 27890111 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Mechanical mounting: screw, Electrical mounting: Press-Fit; screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX202GB12VS 27890111 nach Preis ab 178.24 EUR bis 178.24 EUR
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SEMIX202GB12VS 27890111 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Topology: IGBT half-bridge; thermistor Mechanical mounting: screw Electrical mounting: Press-Fit; screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Max. off-state voltage: 1.2kV |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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