Produkte > SEMIKRON DANFOSS > SEMIX202GB12VS 27890111

SEMIX202GB12VS 27890111 SEMIKRON DANFOSS


SEMIX202GB12VS.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 200A
Pulsed collector current: 600A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMIX2S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details SEMIX202GB12VS 27890111 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 200A, Pulsed collector current: 600A, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMIX2S, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SEMIX202GB12VS 27890111

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SEMIX202GB12VS 27890111 Hersteller : SEMIKRON DANFOSS SEMIX202GB12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 200A
Pulsed collector current: 600A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMIX2S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar