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SEMIX206GD12T4P 27896030 SEMIKRON DANFOSS


SEMIX206GD12T4P.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 200A
Pulsed collector current: 600A
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 6p
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX206GD12T4P 27896030 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 200A, Pulsed collector current: 600A, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge; thermistor, Case: SEMiX® 6p, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.

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SEMIX206GD12T4P 27896030 Hersteller : SEMIKRON DANFOSS SEMIX206GD12T4P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 200A
Pulsed collector current: 600A
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 6p
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar