SEMIX223GB12M7P 27895102 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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Technische Details SEMIX223GB12M7P 27895102 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 225A, Case: SEMiX® 3p, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw.