SEMIX223GD12E4C 27890208 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 225A
Pulsed collector current: 675A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®33c
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX223GD12E4C 27890208 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 225A, Pulsed collector current: 675A, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge; thermistor, Case: SEMIX®33c, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SEMIX223GD12E4C 27890208 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: for UPS; frequency changer; Inverter; photovoltaics Collector current: 225A Pulsed collector current: 675A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge; thermistor Case: SEMIX®33c Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |