SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; thermistor, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX302GAL12E4S 27890220
Foto | Bezeichnung | Hersteller | Beschreibung |
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SEMIX302GAL12E4S 27890220 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
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