Produkte > SEMIKRON DANFOSS > SEMIX302GAL12E4S 27890220

SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F4AF4EB80B40D6&compId=SEMIX302GAL12E4S.pdf?ci_sign=b5fe2b4cc2c9658773f4297c3a1075c8252e8b25 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Topology: boost chopper; thermistor
Semiconductor structure: diode/transistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Case: SEMIX2S
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Technische Details SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Max. off-state voltage: 1.2kV, Topology: boost chopper; thermistor, Semiconductor structure: diode/transistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Case: SEMIX2S.