SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.7kV, Collector current: 300A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor.