Produkte > SEMIKRON DANFOSS > SEMIX302GB17E4S 27892110

SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F2614938BCE0D6&compId=SEMIX302GB17E4S.pdf?ci_sign=6b6cf18fdb13214dd7be31a903424c026ca4876f Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.7kV, Collector current: 300A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Anzahl je Verpackung: 1 Stücke.

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SEMIX302GB17E4S 27892110 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F2614938BCE0D6&compId=SEMIX302GB17E4S.pdf?ci_sign=6b6cf18fdb13214dd7be31a903424c026ca4876f Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH