SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.7kV, Collector current: 300A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX302GB17E4S 27892110
Foto | Bezeichnung | Hersteller | Beschreibung |
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SEMIX302GB17E4S 27892110 | Hersteller : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Collector current: 300A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw Topology: IGBT half-bridge; thermistor |
Produkt ist nicht verfügbar |