Produkte > SEMIKRON DANFOSS > SEMIX303GB12E4I50P 27897007

SEMIX303GB12E4I50P 27897007 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCA20348F6C0D6&compId=SEMIX303GB12E4I50P.pdf?ci_sign=6fadfbd6aec05b431189dc564391cf1eec7fd518

Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of semiconductor module: IGBT
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Topology: current shunt; IGBT half-bridge; thermistor
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details SEMIX303GB12E4I50P 27897007 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV, Type of semiconductor module: IGBT, Case: SEMiX® 3p, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Topology: current shunt; IGBT half-bridge; thermistor, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics.