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SEMIX303GB12E4S 27890130 SEMIKRON DANFOSS


SEMiX303GB12E4s.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Case: SEMiX® 3s
Gate-emitter voltage: ±20V
Collector current: 300A
Max. off-state voltage: 1.2kV
Pulsed collector current: 900A
Topology: IGBT half-bridge; thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
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Technische Details SEMIX303GB12E4S 27890130 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Case: SEMiX® 3s, Gate-emitter voltage: ±20V, Collector current: 300A, Max. off-state voltage: 1.2kV, Pulsed collector current: 900A, Topology: IGBT half-bridge; thermistor, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT, Electrical mounting: Press-Fit; screw.