SEMIX303GB12M7P 27895107 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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Technische Details SEMIX303GB12M7P 27895107 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Case: SEMiX® 3p, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Gate-emitter voltage: ±20V, Collector current: 300A, Application: for UPS; Inverter; photovoltaics, Pulsed collector current: 600A, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT.