SEMIX303GB12M7P 27895107 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMiX® 3p
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX303GB12M7P 27895107 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Application: for UPS; frequency changer; Inverter; photovoltaics, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMiX® 3p, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SEMIX303GB12M7P 27895107 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Application: for UPS; frequency changer; Inverter; photovoltaics Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; thermistor Case: SEMiX® 3p Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |