SEMIX303GB17E4P 27895407 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX303GB17E4P 27895407 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Electrical mounting: Press-Fit; screw, Case: SEMiX® 3p, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Max. off-state voltage: 1.7kV, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SEMIX303GB17E4P 27895407 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Topology: IGBT half-bridge; thermistor Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 900A Max. off-state voltage: 1.7kV |
Produkt ist nicht verfügbar |