SEMIX303GD12E4C 27890210 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX®33c
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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Technische Details SEMIX303GD12E4C 27890210 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Case: SEMIX®33c, Mechanical mounting: screw, Topology: IGBT three-phase bridge; thermistor, Gate-emitter voltage: ±20V, Collector current: 300A, Application: for UPS; Inverter; photovoltaics, Pulsed collector current: 900A, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT.