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SEMIX453GAL12E4S 27890144 SEMIKRON DANFOSS

SEMIX453GAL12E4S.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Case: SEMiX® 3s
Gate-emitter voltage: ±20V
Collector current: 450A
Max. off-state voltage: 1.2kV
Pulsed collector current: 1.35kA
Topology: boost chopper; thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
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Technische Details SEMIX453GAL12E4S 27890144 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Case: SEMiX® 3s, Gate-emitter voltage: ±20V, Collector current: 450A, Max. off-state voltage: 1.2kV, Pulsed collector current: 1.35kA, Topology: boost chopper; thermistor, Semiconductor structure: diode/transistor, Type of semiconductor module: IGBT, Electrical mounting: Press-Fit; screw.