SEMIX603GB12E4SICP 27895300 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Case: SEMiX® 3p
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: SiC; Trench
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; frequency changer; Inverter; photovoltaics
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX603GB12E4SICP 27895300 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Case: SEMiX® 3p, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: SiC; Trench, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 600A, Pulsed collector current: 1.2kA, Application: for UPS; frequency changer; Inverter; photovoltaics, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX603GB12E4SICP 27895300
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SEMIX603GB12E4SICP 27895300 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Case: SEMiX® 3p Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: SiC; Trench Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Application: for UPS; frequency changer; Inverter; photovoltaics |
Produkt ist nicht verfügbar |