Produkte > SEMIKRON DANFOSS > SEMIX604GB12VS 27890151

SEMIX604GB12VS 27890151 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DE0FD681F180D6&compId=SEMIX604GB12VS.pdf?ci_sign=2a8e4668f4bb9cc690f95f3b373440d649351eb5 Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details SEMIX604GB12VS 27890151 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 600A, Case: SEMiX® 4s, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.8kA, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

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SEMIX604GB12VS 27890151 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DE0FD681F180D6&compId=SEMIX604GB12VS.pdf?ci_sign=2a8e4668f4bb9cc690f95f3b373440d649351eb5 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH