SEMIX604GB12VS 27890151 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMiX® 4s
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.8kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SEMIX604GB12VS 27890151 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMiX® 4s, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 600A, Pulsed collector current: 1.8kA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SEMIX604GB12VS 27890151
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SEMIX604GB12VS 27890151 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; thermistor Case: SEMiX® 4s Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.8kA |
Produkt ist nicht verfügbar |