
SG40T120DB SIRECTIFIER


Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 560ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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Technische Details SG40T120DB SIRECTIFIER
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 40A, Power dissipation: 300W, Case: TO247AD, Gate-emitter voltage: ±20V, Pulsed collector current: 180A, Mounting: THT, Gate charge: 170nC, Kind of package: tube, Turn-on time: 143ns, Turn-off time: 560ns, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
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SG40T120DB | Hersteller : SIRECTIFIER |
![]() ![]() Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 143ns Turn-off time: 560ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |