SG40T120UDB2 SIRECTIFIER
Hersteller: SIRECTIFIERCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD
Collector current: 40A
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 230nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 109ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 280W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 5+ | 14.3 EUR |
| 13+ | 5.51 EUR |
| 25+ | 3.36 EUR |
| 60+ | 3.26 EUR |
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Technische Details SG40T120UDB2 SIRECTIFIER
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD, Collector current: 40A, Case: TO247AD, Gate-emitter voltage: ±20V, Pulsed collector current: 180A, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 230nC, Mounting: THT, Collector-emitter voltage: 1.2kV, Turn-on time: 109ns, Turn-off time: 338ns, Type of transistor: IGBT, Power dissipation: 280W, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SG40T120UDB2 nach Preis ab 71.5 EUR bis 71.5 EUR
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SG40T120UDB2 | Hersteller : SIRECTIFIER |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD Collector current: 40A Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 180A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 230nC Mounting: THT Collector-emitter voltage: 1.2kV Turn-on time: 109ns Turn-off time: 338ns Type of transistor: IGBT Power dissipation: 280W Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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