SG40T120UDB2 SIRECTIFIER
Hersteller: SIRECTIFIERCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 280W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 338ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.19 EUR |
| 20+ | 3.76 EUR |
| 25+ | 2.89 EUR |
| 27+ | 2.73 EUR |
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Technische Details SG40T120UDB2 SIRECTIFIER
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 40A, Power dissipation: 280W, Case: TO247AD, Gate-emitter voltage: ±20V, Pulsed collector current: 180A, Mounting: THT, Gate charge: 230nC, Kind of package: tube, Turn-on time: 109ns, Turn-off time: 338ns, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SG40T120UDB2 nach Preis ab 2.73 EUR bis 4.19 EUR
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SG40T120UDB2 | Hersteller : SIRECTIFIER |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 280W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 109ns Turn-off time: 338ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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