SG40T120UDB2 SIRECTIFIER
Hersteller: SIRECTIFIERCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD
Mounting: THT
Case: TO247AD
Kind of package: tube
Turn-on time: 109ns
Gate charge: 230nC
Turn-off time: 338ns
Power dissipation: 280W
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 40A
Type of transistor: IGBT
Pulsed collector current: 180A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| 25+ | 3.16 EUR |
| 60+ | 3.06 EUR |
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Technische Details SG40T120UDB2 SIRECTIFIER
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD, Mounting: THT, Case: TO247AD, Kind of package: tube, Turn-on time: 109ns, Gate charge: 230nC, Turn-off time: 338ns, Power dissipation: 280W, Features of semiconductor devices: integrated anti-parallel diode, Gate-emitter voltage: ±20V, Collector current: 40A, Type of transistor: IGBT, Pulsed collector current: 180A, Collector-emitter voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SG40T120UDB2 nach Preis ab 4.46 EUR bis 4.46 EUR
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SG40T120UDB2 | Hersteller : SIRECTIFIER |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD Mounting: THT Case: TO247AD Kind of package: tube Turn-on time: 109ns Gate charge: 230nC Turn-off time: 338ns Power dissipation: 280W Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 40A Type of transistor: IGBT Pulsed collector current: 180A Collector-emitter voltage: 1.2kV |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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