SI1051X-T1-GE3 Vishay

Description: MOSFET P-CH 8V 1.2A SC89-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 236mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-89 (SOT-563F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 4 V.